Metal treatment – Process of modifying or maintaining internal physical... – With ion implantation
Reexamination Certificate
2006-10-24
2006-10-24
Wyszomierski, George (Department: 1742)
Metal treatment
Process of modifying or maintaining internal physical...
With ion implantation
C148S277000, C148S279000, C148S518000, C205S123000, C205S157000, C438S479000, C438S480000
Reexamination Certificate
active
07125458
ABSTRACT:
A simple and direct method of forming a SiGe-on-insulator that relies on the oxidation of a porous silicon layer (or region) that is created beneath a Ge-containing layer is provided. The method includes the steps of providing a structure comprising a Si-containing substrate having a hole-rich region formed therein and a Ge-containing layer atop the Si-containing substrate; converting the hole-rich region into a porous region; and annealing the structure including the porous region to provide a substantially relaxed SiGe-on-insulator material.
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Bedell Stephen W.
Choe Kwang Su
Fogel Keith E.
Sadana Devendra K.
Scully , Scott, Murphy & Presser, P.C.
Trepp Robert M.
Wyszomierski George
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