Formation of a multi-layer glass-metallized structure formed on

Details Formation of a multi-layer glass-metallized structure formed on Formation of a multi-layer glass-metallized structure formed on

1986-03-25

1986-11-11

Kellogg, Arthur

Glass manufacturing

Processes

Reshaping or surface deformation of glass preform

65112, 29847, 156633, 156643, 156644, 156654, 156663, 219121LJ, 219121LL, B44C 122, C03B 2326

Patent

active

046220585

ABSTRACT:
In the fabrication of an interconnection package for a plurality of semiconductors or integrated circuit chips wherein a multi-layered glass or glass-ceramic superstructure with a multi-layered distribution of planar conductors is formed by a process forming vertical conductive interconnection or studs between planar conductor layers, by pre-forming a via configuration in each glass or glass-ceramic layer at the interconnection points followed by depositing the conductive studs therein. The via configuration is formed by defining a desired pattern of vias, and ablating the vias through the top of and through the glass or glass-ceramic layer, using an ultraviolet laser. The vias may be stepped-shoulder or counter-bored by using a two mask operation.

REFERENCES:
patent: 3509624 (1970-05-01), Boucher
patent: 3713922 (1973-01-01), Lepselter et al.
patent: 4439270 (1984-03-01), Powell et al.
patent: 4478677 (1984-10-01), Chen et al.
patent: 4508749 (1985-04-01), Brannon et al.
High Resolution Ultra-Violet Photoablation of SiO.sub.2 Fiori et al, pp. 361, 362, Aug. 15, 1985, Am. Inst. of Physics.
Western Electric Technical Digest, No. 58, 4-80, Windows Openings in Thick Dielectric Films on Conductors, P. F. Schmidt.

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