Formation of a bottle shaped trench

Details Formation of a bottle shaped trench Formation of a bottle shaped trench

1997-09-25

1999-04-06

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438714, 438715, 438732, 438733, 438734, H01L 21306, C03C 2506, B44C 122

Patent

active

058918078

ABSTRACT:
A method for forming a bottle shaped trench 20 in a semiconductor substrate 10 includes reactive ion etching a trench having a tapered top portion 25 in the semiconductor device and continuing to reactive ion etch while increasing the temperature of the semiconductor device to impart a reentrant profile 22 to the trench.

REFERENCES:
patent: 4726879 (1988-02-01), Bondur et al.
patent: 4855017 (1989-08-01), Douglas
patent: 5013400 (1991-05-01), Kurasaki et al.
patent: 5403435 (1995-04-01), Cathey et al.
patent: 5605600 (1997-02-01), Muller et al.
Ozaki, T., et al., "0.228 Micrometer-square Trench cell technologies with Bottle-Shaped Capacitor for 1 Gbit DRAMs", Technical Digest/International Electron Devices Meeting (IEDM-95), 10-13 Dec. 1995, Washington DC, pp. 27.3.1-27.3.4, 1995.

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