Formation of 3-dimensional silicon silicide structures

Details Formation of 3-dimensional silicon silicide structures Formation of 3-dimensional silicon silicide structures

1994-07-25

1995-10-31

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257520, 257621, 257190, 257768, 257755, H01L 21283, H01L 2348

Patent

active

054632544

ABSTRACT:
An epitaxial conductor and a method for forming buried conductor patterns is described incorporating a layer of single crystalline silicon, a pattern formed therein such as a trench, a layer of metal silicide epitaxial formed on the bottom surface of the pattern or trench, a layer of silicon epitaxially formed thereover, and a layer of metal silicide epitaxially formed over the silicon layer. The invention overcomes the problem of twinning defects in the top surface of epitaxial silicide layers.

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Von Kanel et al., "Epitaxy of Metal Silicides", Thin Solid Films, v. 184 (1990) pp. 295-308.

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