Metal treatment – Stock – Age or precipitation hardened or strengthened
Reexamination Certificate
1994-12-15
2001-09-25
Ip, Sikyin (Department: 1742)
Metal treatment
Stock
Age or precipitation hardened or strengthened
C148S416000, C148S438000, C148S439000, C420S538000, C427S405000, C428S650000
Reexamination Certificate
active
06294030
ABSTRACT:
BACKGROUND
1.Field
This invention relates to thin metal alloy films which are quasicrystalline or approximately quasicrystalline, as opposed to amorphous or crystalline, in nature. It is particularly directed to a method for making very thin such films from materials having the general formula Al
a
Cu
b
Fe
c
X
d
I
e
, where X represents one or more optional alloy elements and I represents manufacturing impurities. It is further directed to applications which take advantage of the unique properties of such films.
2. State of the Art
Alloy metal films are well known. Alloys having the general formula Al
a
Cu
b
Fe
c
X
d
I
e
, where X represents one or more elements selected from the group consisting of V, Mo, Ti, Zr, Nb, Cr, Mn, Ru, Rh, Ni, Mg, W, Si and the rare earth elements, and I represents manufacturing impurities, generally present in an amount of less than two percent of the atoms present, are disclosed, for example, by U.S. Pat. No. 5,204,191. U.S. Pat. Nos. 4,595,429 and 4,710,246 disclose a number of Aluminum-based alloys characterized by amorphous or microcrystalline structures.
An icosahedral phase was observed in 1984 in a rapidly quenched AlMn alloy. Since that time, many experiments have been carried out to clarify the structure and properties of this new (“quasicrystalline”) state of condensed matter. Most of the quasicrystalline phases studied have been metastable; however, a few of them have evidenced thermodynamic stability. The AlCuFe alloys, for example, provide pure icosahedral phases of high structural quality and peculiar electronic and magnetic properties. Notably, such alloys are characterized by unusually high electrical resistivity values, which increase as the structural quality of the sample is improved; a very low thermal conductivity; a low density of states at the Fermi level; a strong composition dependence of the resistivity and the Hall coefficient and a diamagnetic susceptibility.
The AlCuFe alloys have typically been prepared either by melt spinning or long term annealing of bulk ingots. Monograins of millimeter size have been produced by these techniques. Recently, films about 10 &mgr;m in thickness have been obtained by cosputtering three elements onto liquid nitrogen cooled substrates and then annealing the resulting films. Binary metastable quasicrystals have also been produced by solid state diffusion of either sputtered or evaporated layers. Decagonal Al
3
Pd phases have been obtained by the lateral diffusion of Al islands on a Pd thin film.
SUMMARY OF THE INVENTION
The disclosures of U.S. Pat. Nos. 4,595,429, 4,710,246 and 5,204,191 are each incorporated by reference as a part of this disclosure for their descriptions of alloy systems and compositions. The alloys defined by the incorporated patent disclosures are regarded as generally good candidates for the production of thin films in accordance with the techniques of this invention. The article “
Formation of AlCuFe quasicrystalline thin films by solid state diffusion
,” T. Klein and O. G. Symko, Appl. Phys. Lett. 64 (4), p 431, Jan. 24, 1994, describes work upon which this application is based in part, and is incorporated in this disclosure by reference.
This invention provides an article of manufacture comprising a quasicrystalline metal alloy film less than about 3000 Å thick. While 3000 Å is not regarded as a “critical” boundary, it represents the approximate upper limit of film thickness at which the films of this invention are currently believed to be distinguishable from films of similar composition produced by other means. The film has a composition of the general formula Al
a
Cu
b
Fe
c
X
d
I
e
, where X represents one or more optional alloy elements and I represents manufacturing impurities. In typical films, a=100-b-c-d-e; 24<b<26; 12<c<13; 0<d<10; and 0<e<3. More preferred film compositions are approximately: a=100-b-c-d-e; 24.4<b<26.0; 12.0<c<13.0; d=0; e=trivial. The film is formed by depositing in sequence on a substrate, by radio frequency sputtering, a stoichiometric amount of each respective constituent material and then annealing the layers, whereby to form the film through solid state diffusion. The substrate may comprise an electrical insulator or a conductor, such as an alloy, and the film may be utilized as a component of an electronic device. The substrate may, alternatively, comprise a wear surface or cutting edge, and the film may be utilized as a protective coating and/or for thermal isolation.
According to this invention, very thin films, typically less than about 3000 Å, ideally less than about 1000 Å thick, are produced by a technique involving depositing “stoichiometric” ratios of selected alloy elements in sequence on an oscillating substrate, and then annealing the deposited layers to produce an alloy having a composition within a quasicrystalline phase. The term “stoichiometric” is used in this disclosure to indicate the presence of atoms of selected elements in a predetermined numerical ratio. Accordingly, layers of the selected alloy elements are deposited in sequence in precise amounts on a suitable substrate. Within practical limits, annealing of those layers will produce an alloy composition reflecting the stoichiometric ratio of the layers. This approach has been found effective to produce very thin films possessing excellent properties for a variety of practical applications. The films of this invention are ideally comprised of ternary stable AlCuFe quasicrystals prepared by the solid state diffusion of Al, Cu, and Fe layers, an exemplary such film being formed from layers of Al, Fe and Cu deposited in sequence in thickness ratios of approximately 7.0/1.0/2.0, respectively, prior to annealing.
While this disclosure emphasizes AlCuFe alloys, the film formation techniques of this invention are regarded as being generally applicable to any alloy composition within a quasicrystalline region of a phase diagram descriptive of any alloy system of interest. The aluminum-rich alloys described by the '429, the '246 and the '191 patents are of primary interest at present because of the interesting properties observed to be characteristic of certain of them.
Practical applications for films produced by this invention include electronic circuits for devices; coatings to reduce friction and wear in machines, bearings, cutting tools and circuits; protection of hard disk surfaces against hard crashes and providing low friction surfaces to devices such as magnetic storage drives and magnetic tape or disc heads. The high hardness and low friction characteristics of quasicrystalline materials are well suited for coatings of cutting surfaces, such as razor blades, surgical blades and knives, generally offering smoother performance with less tear of flesh or other forms of degradation typically encountered in cutting various materials. Such coatings impart non-stick characteristics to the blades in use, and extend their useful lives. Electrosurgical blades coated with a thin film of quasicrystalline AlCuFe material offer superior mechanical and electrical performance, for example, compared to presently-used teflon-coated blades. Similar coatings may also be applied to the critical surfaces of sports equipment, notably skates and skis.
The low thermal conductivity of the films of this invention enables them to function well in a variety of applications. For example, a quasicrystalline coating may function as a heat shield or to maintain a thermal gradient.
Various substrates are practical. Strontium titanate, silicon dioxide, sapphire and steel are exemplary substrates. Very thin films can be fabricated in accordance with this invention, and both the thickness and purity level of the film can be well controlled. The process may be conducted so that film formation takes place by solid state diffusion, without going through a liquid phase. Lower anneal temperatures (600° C. for a particular alloy compared to the 800° C. temperature required for the same alloy in bu
Kieda David
Klein Thierry
Symko Orest G.
Ip Sikyin
TraskBritt
University of Utah Research Foundation
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