Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...
Patent
1996-07-22
1998-08-11
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth with a subsequent step acting on the...
117 1, 117 3, 117937, C30B 1536
Patent
active
057922535
ABSTRACT:
A cylindrical alkali halide single-crystal-type ingot having an axis compressed in a heated dual platen press. To produce an approximately rectangular compressed ingot that is devoid of cracks and fissures at and adjacent the periphery, the surface of the ingot is flatted. For crystals having a face-centered lattice (e.g. NaI), the flat is parallel to the (100) crystallographic plane. For crystals having a body-centered lattice (e.g. CsI), the flat is parallel to the (110) crystallographic plane. The flat is placed on the lower platen of the press to properly orient the crystallographic structure of the ingot with respect to the direction of compression.
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Eidelman Lev G.
Radkevich Olexy V.
Garrett Felisa
Jay, Esq. Mark H.
Siemens Medical Systems Inc.
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