Foreign material removing method for capacitance type...

Details Foreign material removing method for capacitance type... Foreign material removing method for capacitance type...

2006-05-16

2006-05-16

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

C438S048000, C438S097000

Reexamination Certificate

active

07045371

ABSTRACT:
In a capacitance type acceleration sensor comprising a movable portion which is equipped with movable electrodes, a poise portion and spring portions formed on a semiconductor substrate and is displaced under application of acceleration, and fixed portions each of which is equipped with fixed electrodes having detection faces confronting the detection faces of the movable electrodes, the movable portion is forcedly displaced by applying a predetermined driving voltage between the movable portion and each of the fixed portions, whereby foreign material hidden in a hollow portion between the movable portion and the semiconductor substrate below the movable portion is exposed and removed by a suction unit.

REFERENCES:
patent: 4934200 (1990-06-01), Lantz
patent: 5228341 (1993-07-01), Tsuchitani et al.
patent: 6538798 (2003-03-01), Miller et al.
patent: 2002/0140533 (2002-10-01), Miyazaki et al.
patent: A-8-136377 (1996-05-01), None
patent: A-2000-46863 (2000-02-01), None

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