Forced convection assisted rapid thermal furnace

Drying and gas or vapor contact with solids – Process – Gas or vapor contact with treated material

Reexamination Certificate

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Details

C034S107000, C034S202000, C432S152000, C118S724000, C118S725000

Reexamination Certificate

active

06952889

ABSTRACT:
An apparatus and corresponding method for heating a wafer during processing. The apparatus includes a process chamber enclosing a processing tube defining a processing area. The processing tube includes a first wall and a second wall which define a hollow cavity or passageway therebetween. The second wall includes a plurality of holes or outlets formed thereon which allow environmental communication between the hollow cavity and the processing area. The apparatus also includes a plurality of resistive heating elements positioned adjacent to the processing tube. A thermal energy output from the resistive heating elements is configured to heat a gas flowing through the hollow cavity. The gas flowing through the hollow cavity exits the hollow cavity through the plurality of holes and convectively change the temperature of the wafer disposed in the processing tube.

REFERENCES:
patent: 4232063 (1980-11-01), Rosler et al.
patent: 4925388 (1990-05-01), Iseki et al.
patent: 5903711 (1999-05-01), Okase
patent: 6402849 (2002-06-01), Kwag et al.
patent: 60-200531 (1985-10-01), None
patent: 61-190948 (1986-08-01), None
patent: 11-150077 (1999-06-01), None

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