Force transducer and pressure detecting circuit using the same

Details Force transducer and pressure detecting circuit using the same Force transducer and pressure detecting circuit using the same

1993-07-16

1994-09-27

Chilcot, Jr., Richard E.

Measuring and testing

Dynamometers

Responsive to force

73DIG4, 73720, G01L 116, G01L 118, G01L 904, G01L 175

Patent

active

053498739

ABSTRACT:
A force transducer comprising: a silicon semiconductor having a crystal face of (110); a pair of input-output shared electrodes mounted on the crystal face of the silicon semiconductor in mutual confronting relationship in a direction of <110> of the crystal or a direction equivalent to the direction of <110>; a force transmission block connected to the crystal face of the silicon semiconductor for transmitting a force W perpendicularly to the crystal face; and a support bed supporting the silicon semiconductor and connected to the silicon semiconductor at a face opposite to the crystal face to which the force transmission block is connected, whereby a voltage corresponding to the force W and to be measured is output from the input-output shared electrodes when the force W is applied perpendicularly to the crystal face of the silicon semiconductor via the force transmission block while a current flows in the silicon semiconductor via the input-output shared electrodes.

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Sensors and Actuators, vol. 13, No. 1, Jan. 1988, pp. 53-62, I. Igarashi, "Semiconductor Dynamic Sensors".
Sensors and Actuators, vol. 27, No. 1/3, May 1991, pp. 801-807, H. C. J. M. Van Gestel, et al., "On-Chip Piezoresistive Stress Measurement in Three Directions".
Journal of Applied Physics, vol. 32, No. 10, Oct. 1961, pp. 2008-2019, W. G. Pfann, et al.

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