Force sensor with a piezoelectric FET

Details Force sensor with a piezoelectric FET Force sensor with a piezoelectric FET

1983-02-16

1984-11-06

Ruehl, Charles A.

Measuring and testing

Dynamometers

Responsive to force

73651, 310338, 310330, 357 26, G01L 116

Patent

active

044804881

ABSTRACT:
A force sensor comprising a field effect transistor (FET) structure formed on a substrate, having an insulating layer overlying the substrate adjacent to the channel region of the transistor structure. A layer of piezoelectric material overlies the insulating layer, the layer of piezoelectric material having a portion which extends beyond the insulating layer to form a cantilever structure overhanging a portion of the channel region. A control electrode overlies the cantilever structure. Forces acting on the cantilever structure modify the charge distribution in the underlaying channel region, thereby to cause the drain current of the transistor to vary with any variation of force on the cantilever structure.

REFERENCES:
patent: 3672985 (1972-06-01), Nathanson et al.
patent: 4378510 (1983-03-01), Bennett
Chen et al., "Integrated Silicon Microbeam P1-FET Accelerometer", IEEE Trans. on Electron Devices, vol. ED-29 (1982), pp. 27-33.
Chen et al., "Thin Film ZnO-MOS Transducer with Virtually D.C. Response", IEEE Ultrasonic Symposium (1980).

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