For the protection of an MOS-transistor from overloading

Details For the protection of an MOS-transistor from overloading For the protection of an MOS-transistor from overloading

1983-11-02

1986-06-17

Moose, Jr., Harry E.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific current responsive fault sensor

361 98, 361101, H02H 3093

Patent

active

045959668

ABSTRACT:
An arrangement for the protection of a transistor, particularly a MOS-switching transistor including a zener diode connected between the gate and source terminals for limiting the gate potential and a switch-off transistor connected to the control circuit of the MOS-transistor for grounding the gate thereof and switching it off. First and second monitoring circuits are coupled between the MOS-transistor and the switch-off transistor for producing a signal switching on the switch-off transistor in response to a drop in the load current and an increase in the output voltage of the MOS-transistor. First and second timing circuits block the signals of the monitoring circuits for predetermined intervals.

REFERENCES:
patent: 4363068 (1982-12-01), Burns
patent: 4423457 (1983-12-01), Brajder

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