Focused ion beam visual endpointing

Details Focused ion beam visual endpointing Focused ion beam visual endpointing

2005-01-04

2005-01-04

Deo, Duy-Vu (Department: 1765)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

C438S014000, C438S712000, C438S719000

Reexamination Certificate

active

06838294

ABSTRACT:
A method for use in removing a portion of a semiconductor chip. The method comprises etching a backside of the semiconductor chip, the frontside including a first well with a first type of doping and a second well with a second type of doping; monitoring a backside of the semiconductor chip during etching; and determining when a first portion of the backside over one of the first and second wells differs from a second portion of the backside over the other of the first and second wells. A method for etch endpoint detection includes etching a backside of a semiconductor chip, the semiconductor chip having at least one doped well formed proximate a frontside of the semiconductor chip; monitoring the backside of the semiconductor chip during etching until at least one doped well becomes visible; and stopping etching after the doped well becoming visible.

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