Focused ion beam processing with charge control

Details Focused ion beam processing with charge control Focused ion beam processing with charge control

1992-11-23

1994-10-18

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

H01J 3730

Patent

active

053571169

ABSTRACT:
Focused ion beam (FIB) systems are used for IC mask or reticle repair and imaging and other applications. The impinging ions can cause an undesirable charge build-up on the specimen. Prior to beginning repair operations in a FIB system, a fluid containing a conductive material such as dimethyl ammonium salt is applied to the reticle, mask or device and allowed to dry, leaving a thin conductive layer on the specimen. A leakage path is preferably provided from the thin conductive layer to ground, to prevent charge buildup on the specimen. The FIB is used to cut through the conductive layer before commencing FIB deposition, to assure proper bonding of the deposited material. The technique also has application with electron beam imaging systems.

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K. Wittmaack, Primary-ion charge compensation in SIMS analysis of insulators, J. Appl. Phys. 50(1), pp. 493-497, Jan. 1979.

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