Focused ion beam processing method

Details Focused ion beam processing method Focused ion beam processing method

2006-10-03

2009-08-18

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492200, C250S309000, C250S310000, C250S3960ML, C250S397000, C250S398000

Reexamination Certificate

active

07576340

ABSTRACT:
There is provided a focused ion beam processing method in which damage to a workpiece is minimized when the surface of the workpiece is irradiated and processed with an ion beam. The method comprises the steps of: generating an acceleration voltage between an ion source and a workpiece; focusing an ion beam emitted from the ion source; and applying the ion beam to a predetermined process position to process the surface of the workpiece. In this process, the energy level of the ion beam produced by the acceleration voltage is set within a range from at least 1 keV to less than 20 keV.

REFERENCES:
patent: 5591970 (1997-01-01), Komano et al.
patent: 6303932 (2001-10-01), Hamamura et al.
patent: 2001-006605 (2001-01-01), None
R. Hagiwara et al., “Advanced FIB mask repair technology for ArF lithography,” Photomask and Next-Generation Lighography Mask Technology VIII, Hiroichi Kawahira, Editor, Proceedings of SPIE vol. 4409, 2001.

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