Focused ion beam lithography method with sample inspection throu

Details Focused ion beam lithography method with sample inspection throu Focused ion beam lithography method with sample inspection throu

1998-12-03

2000-11-14

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

430296, 430302, G03F 900

Patent

active

061467979

ABSTRACT:
A method for performing a cross-sectional analysis of a sample includes steps of observing a sample surface to locate a region of a sample at which a cross-sectional analysis is to be performed, tilting a sample by a predetermined angle, directing a focused ion beam to the surface of the tilted sample, etching a region of the tilted sample, and observing the sample by analyzing particles emitted during the etching process. The angle of tilt of the sample with respect to the angle of incidence of the focused ion beam can be increased to effectively increase the resolution of the focused ion beam etching process with respect to sub-surface structure of the sample.

REFERENCES:
patent: 5271800 (1993-12-01), Koontz et al.

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