Focused ion beam implantation apparatus

Details Focused ion beam implantation apparatus Focused ion beam implantation apparatus

1993-06-29

1995-06-06

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, 2504911, H01J 37317

Patent

active

054224900

ABSTRACT:
A focused ion beam implantation apparatus comprises a vacuum chamber, an ion source generating an ion beam, a means for accelerating the ion beam, a means for eliminating unwanted ion species in the ion beam, and a means for focusing the ion beam on a target. The apparatus further includes a means for scanning the ion beam relative to the target and means for inclining the ion beam relative to the target.

REFERENCES:
patent: 4117339 (1978-09-01), Wolfe
patent: 4334139 (1982-06-01), Wittekoek et al.
patent: 4710639 (1987-12-01), Sawaragi
Akaike, et al., Submicrometer-Scale Patterning of Superconducting Nb Films Using Focused Ion Beam, J. Appl. Phys., vol. 31 (1992), pp. L410-L412.
Patent Abstracts of Japan, vol. 16, No. 275 (E-1219), 19 Jun. 1992.

Affiliated with

Also associated with

Rating

Focused ion beam implantation apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Focused ion beam implantation apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Focused ion beam implantation apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-989197