Focused ion beam for thin film resistor trim on aluminum nitride

Details Focused ion beam for thin film resistor trim on aluminum nitride Focused ion beam for thin film resistor trim on aluminum nitride

1991-10-21

1993-11-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437192, 437918, 437173, 257537, H01L 21465

Patent

active

052665291

ABSTRACT:
A method for trimming thin film resistors. A focused inert ion beam is employed to selectively remove portions of a resistive film deposited on a substrate.

REFERENCES:
patent: 4457803 (1984-07-01), Takigawa
patent: 4737757 (1988-04-01), Senda et al.
Fabrication of Microelement Resistors by Electron Beam and their Characteristics By Kimura et al., 1965, 1st Ent. Conf. on electron and Ion Beam Science and techno.
Miro-Machining by Ion Bombardment by Castaing et al. 1966, vol. 2, Electron and Ion beam Science and Techno.

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