Focused ion beam endpoint detection using charge pulse...

Details Focused ion beam endpoint detection using charge pulse... Focused ion beam endpoint detection using charge pulse...

2005-06-28

2005-06-28

Tang, Minh N. (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C250S309000, C250S492210

Reexamination Certificate

active

06911832

ABSTRACT:
A system and method for detecting a milling endpoint on a semiconductor sample by directing an ion beam from a focused ion beam (FIB) apparatus at the sample and using charge pulse detection electronics (CPDE) components to generate a distribution curve on a histogram display. A preferred configuration of the CPDE components includes a charge preamplifier, a pulse amplifier, a pulse shaper, and a multichannel analyzer (MCA).

REFERENCES:
patent: 4629898 (1986-12-01), Orloff et al.
patent: 5140164 (1992-08-01), Talbot et al.
patent: 5541411 (1996-07-01), Lindquist et al.
patent: 5952658 (1999-09-01), Shimase et al.

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