Coating apparatus – Gas or vapor deposition – With treating means
Reexamination Certificate
2007-02-06
2007-02-06
Bueker, Richard (Department: 1763)
Coating apparatus
Gas or vapor deposition
With treating means
Reexamination Certificate
active
10209453
ABSTRACT:
Introducing at least one metal such as cobalt, molybdenum, metal carbonyl, tungsten, platinum, or other suitable metal to a focused ion beam. Introducing the focused ion beam to a substrate within a processing chamber. Forming at least one layer over a substrate. Applying heat to the layer by, for example, a laser.
REFERENCES:
patent: 4489478 (1984-12-01), Sakurai
patent: 4800173 (1989-01-01), Kanai et al.
patent: 4853341 (1989-08-01), Nishioka et al.
patent: 4873413 (1989-10-01), Uesugi et al.
patent: 4876112 (1989-10-01), Kaito et al.
patent: 4900695 (1990-02-01), Takahashi et al.
patent: 4908226 (1990-03-01), Kubena et al.
patent: 4952421 (1990-08-01), Morimoto et al.
patent: 4962059 (1990-10-01), Nishioka et al.
patent: 4983540 (1991-01-01), Yamaguchi et al.
patent: 4993361 (1991-02-01), Unvala
patent: 5026664 (1991-06-01), Hongo et al.
patent: 5104684 (1992-04-01), Tao et al.
patent: 5106764 (1992-04-01), Harriott et al.
patent: 5120925 (1992-06-01), Ohnishi et al.
patent: 5132248 (1992-07-01), Drummond et al.
patent: 5182170 (1993-01-01), Marcus et al.
patent: 5182231 (1993-01-01), Hongo et al.
patent: 5230756 (1993-07-01), Kawasaki et al.
patent: 5244828 (1993-09-01), Okada et al.
patent: 5342448 (1994-08-01), Hamamura et al.
patent: 5451260 (1995-09-01), Versteeg et al.
patent: 5500289 (1996-03-01), Gavish et al.
patent: 5640667 (1997-06-01), Freitag et al.
patent: 5700526 (1997-12-01), Ximen et al.
patent: 5827571 (1998-10-01), Lee et al.
patent: 5976328 (1999-11-01), Azuma et al.
patent: 6066358 (2000-05-01), Guo et al.
patent: 6090458 (2000-07-01), Murakami
patent: 6261850 (2001-07-01), Marsh
patent: 6309798 (2001-10-01), Reetz et al.
patent: 6322672 (2001-11-01), Shuman et al.
patent: 6376148 (2002-04-01), Liu et al.
patent: 6534133 (2003-03-01), Kaloyeros et al.
patent: 6638580 (2003-10-01), Gavish
patent: 6660631 (2003-12-01), Marsh
patent: 2001/0044207 (2001-11-01), Marsh
patent: 2001/0045525 (2001-11-01), Gerlach et al.
patent: 2002/0197851 (2002-12-01), Gavish et al.
Vossen, Thin Film Processes II, Academic Press, 1991, pp. 642 and 643.
Gavish Ilan
Greenzweig Yuval
Blakely , Sokoloff, Taylor & Zafman LLP
Bueker Richard
Intel Corporation
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