Focused ion beam deposition

Coating apparatus – Gas or vapor deposition – With treating means

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

10209453

ABSTRACT:
Introducing at least one metal such as cobalt, molybdenum, metal carbonyl, tungsten, platinum, or other suitable metal to a focused ion beam. Introducing the focused ion beam to a substrate within a processing chamber. Forming at least one layer over a substrate. Applying heat to the layer by, for example, a laser.

REFERENCES:
patent: 4489478 (1984-12-01), Sakurai
patent: 4800173 (1989-01-01), Kanai et al.
patent: 4853341 (1989-08-01), Nishioka et al.
patent: 4873413 (1989-10-01), Uesugi et al.
patent: 4876112 (1989-10-01), Kaito et al.
patent: 4900695 (1990-02-01), Takahashi et al.
patent: 4908226 (1990-03-01), Kubena et al.
patent: 4952421 (1990-08-01), Morimoto et al.
patent: 4962059 (1990-10-01), Nishioka et al.
patent: 4983540 (1991-01-01), Yamaguchi et al.
patent: 4993361 (1991-02-01), Unvala
patent: 5026664 (1991-06-01), Hongo et al.
patent: 5104684 (1992-04-01), Tao et al.
patent: 5106764 (1992-04-01), Harriott et al.
patent: 5120925 (1992-06-01), Ohnishi et al.
patent: 5132248 (1992-07-01), Drummond et al.
patent: 5182170 (1993-01-01), Marcus et al.
patent: 5182231 (1993-01-01), Hongo et al.
patent: 5230756 (1993-07-01), Kawasaki et al.
patent: 5244828 (1993-09-01), Okada et al.
patent: 5342448 (1994-08-01), Hamamura et al.
patent: 5451260 (1995-09-01), Versteeg et al.
patent: 5500289 (1996-03-01), Gavish et al.
patent: 5640667 (1997-06-01), Freitag et al.
patent: 5700526 (1997-12-01), Ximen et al.
patent: 5827571 (1998-10-01), Lee et al.
patent: 5976328 (1999-11-01), Azuma et al.
patent: 6066358 (2000-05-01), Guo et al.
patent: 6090458 (2000-07-01), Murakami
patent: 6261850 (2001-07-01), Marsh
patent: 6309798 (2001-10-01), Reetz et al.
patent: 6322672 (2001-11-01), Shuman et al.
patent: 6376148 (2002-04-01), Liu et al.
patent: 6534133 (2003-03-01), Kaloyeros et al.
patent: 6638580 (2003-10-01), Gavish
patent: 6660631 (2003-12-01), Marsh
patent: 2001/0044207 (2001-11-01), Marsh
patent: 2001/0045525 (2001-11-01), Gerlach et al.
patent: 2002/0197851 (2002-12-01), Gavish et al.
Vossen, Thin Film Processes II, Academic Press, 1991, pp. 642 and 643.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Focused ion beam deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Focused ion beam deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Focused ion beam deposition will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3888974

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.