Focused ion beam defining process enhancement

Details Focused ion beam defining process enhancement Focused ion beam defining process enhancement

2011-02-08

2011-02-08

Chiang, Jack (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Integrated circuit design processing

Physical design processing

C716S125000

Reexamination Certificate

active

07886260

ABSTRACT:
Embodiments employ a method to define points on selected nets in a netlist for a focused ion beam (FIB) to create open circuits. A selected net is partitioned into a set of sub-segments, and after considering all metal layers at and above that of the selected net, a subset of the set of sub-segments is formed as those sub-segments having minimum distances from the considered metal layers greater than some threshold. All contiguous sub-segments in the subset of the set of sub-segments are grouped into groups. The midpoints of such groups, and any isolated sub-segments, are possible candidate for FIB points. For some embodiments, the midpoint of the longest (or one of the longest) groups of sub-segments is chosen as the FIB point for the selected net. Other embodiments are described and claimed.

REFERENCES:
patent: 7036101 (2006-04-01), He et al.

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