Focused ion beam apparatus and method for irradiating focused io

Details Focused ion beam apparatus and method for irradiating focused io Focused ion beam apparatus and method for irradiating focused io

1996-03-22

1998-12-22

Anderson, Bruce

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250309, H01J 37317

Patent

active

058522972

ABSTRACT:
An optical system, wherein the total optical path length from the tip of the emitter of the ion source to the surface of the sample is in a range of from 300 to 450 mm, distance from the ion source to the condenser lens center is in a range of from 15 to 45 mm, and distance from the objective lens center to the sample is in a range of from 10 to 40 mm, is installed in an FIB apparatus in order to realize milling of fine elements to higher accuracy at higher speed and image observation in higher resolution in failure analysis and process evaluation of fine elements such as semiconductors.

REFERENCES:
patent: 5120925 (1992-06-01), Ohnishi et al.
patent: 5270552 (1993-12-01), Ohnishi et al.
patent: 5504340 (1996-04-01), Mizumura et al.
Journal "Vacuum Science and Technology B", vol. 8, No. 6, Nov/Dec 1990, pp. 1673-1675 (see Specification p. 2).

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