Focused ion beam apparatus

Details Focused ion beam apparatus Focused ion beam apparatus

2007-06-26

2007-06-26

Berman, Jack I. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S309000, C250S398000, C250S397000

Reexamination Certificate

active

11151425

ABSTRACT:
In order to implement faster high precision milling and high resolution image observation in the structure analysis and failure analysis of the MEMS and semiconductor devices, a two-lens optical system is mounted on a focused ion beam apparatus, and in the optical system the distance from an emitter apex in an ion source to an earth electrode included in a condenser lens and disposed nearest to the ion source is in the range of 5 to 14 mm.

REFERENCES:
patent: 5852297 (1998-12-01), Ishitani et al.
patent: 2006/0097197 (2006-05-01), Sakaguchi
patent: 05-052721 (1993-03-01), None
patent: 2774884 (1998-04-01), None
patent: 2002-251976 (2002-09-01), None
patent: 02005063865 (2005-03-01), None
Yoshim Kawanami, et al.“Design of high-current-density focused -ion-beam optical system with the aid of a chromatic aberration formula,” J. Vac. Sci. Technol. B 8 (6), Nov./Dec. 1990, pp. 1673-1675.
H. Kasahara, et al. “A 0-30 keV low-energy focused ion beam system,” J. Vac. Sci. Technol. B 6 (3), May/Jun. 1988, pp. 974-976.

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