Focus detection structure

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Details

C430S030000, C257S048000, C257S797000

Reexamination Certificate

active

07056625

ABSTRACT:
A mask or reticle includes a focus test area having a pattern of opaque lines, naked lines, and phase shifting lines. A resulting pattern on a wafer exposed through the focus test area may have a first area of the pattern shifted with respect to a second area of the pattern if the lithography system is out of focus. In some implementations, an area of the pattern may contract or expand if the lithography system is out of focus. An out of focus condition may be determined using a registration tool, scanning electron microscope (SEM), or an interferometer tool (OCD). An out of focus condition may be improved using out of focus information.

REFERENCES:
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patent: 6077756 (2000-06-01), Lin et al.
patent: 6288556 (2001-09-01), Sato et al.
patent: 6437858 (2002-08-01), Kouno et al.
Hiroshi Nomura; “Accurate Measurement of Spherical and Astigmatic Aberrations by a Phase Shift Grating Reticle”; Nov. 2001; Yokohama, Japan; Jpn. J. Appl. Phys. vol. 40 (2001) pp. 6316-6322, Part 1, No. 11.

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