Focal plane phase-shifting lithography

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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430302, G21K 500

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active

057172188

ABSTRACT:
A lithographic system for patterned exposure of radiation-sensitive resist comprises a radiation source, a mask, a converging optical element having a focal plane, and a phase-shifting optical element disposed at the focal plane of the converging optical element. The lithographic system produces enhanced images.

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patent: 5424153 (1995-06-01), Asai
Levenson et al., "Improving Resolution in Photolithography with a Phase-shifting Mask", IEEE Transactions on Electron Devices, vol. ED-29, No. 12, Dec. 1982, pp. 1828-1836.
Levenson, "Phase-shifting Mask Strategies: Line-space Patterns", Microlithography World, Sep./Oct. 1992, pp. 6-12.
Schellenberg et al., "Optimization of Real Phase Mask Performance", IBM Research Report RJ 8395, Oct. 9, 1991, pp. 1-23.
Terasawa et al., "Imaging Characteristics of Multi-phase-shifting and Halftone Phase-shifting Masks", Japanese Journal of Applied Physics, vol. 30, No. 11B, Nov. 1991, pp. 2991-2997.
J. G. Maltabes, "Area Neutral Density Filter for Projection Aligners," IBM Tech. Disclosure Bul. vol. 27, No. 6, Nov. 1984.
R. Feder et al., "Projection of Lines by Use of Edge Enhancement," IBM Tech. Disclosure Bul., vol. 13, No. 3, Aug. 1970.
M. D. Levenson et al., "Phase-Shiftig Mask Strategies: Isolated Bright Contacts," Microlithography World, pp. 7-10, May/Jun. 1992.
P. Burggraaf, Senior Ed. "Lithography's Leading Edge, Part 1: Phase-Shift Technology," Semiconductor International, pp. 43-47, Feb. 1992.

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