Foam semiconductor dopant carriers

Details Foam semiconductor dopant carriers Foam semiconductor dopant carriers

1983-06-08

1985-07-02

Van Balen, William J.

Stock material or miscellaneous articles

Structurally defined web or sheet

Including aperture

427 85, 427227, 427244, 4283115, 4283179, 428688, 428697, 428699, B32B 900

Patent

active

045268266

ABSTRACT:
New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopant, such as phosphorus, arsenic, antimony, boron gallium, aluminum, zinc, silicon, tellurium, tin and cadmium to the semiconductor host substrate; wherein the dopant carrier is comprised of a rigid, multiphase dimensionally stable refractory foam, formed through the impregnation, and subsequent thermal destruction of an open-celled organic polymer foam.

REFERENCES:
patent: 3124542 (1964-03-01), Kohn
patent: 3353994 (1967-11-01), Welsh et al.
patent: 3511689 (1970-05-01), Winklar
patent: 3666526 (1972-05-01), Ettinger et al.
patent: 4004933 (1977-01-01), Ravault
patent: 4171410 (1979-10-01), Frob
patent: 4258099 (1981-03-01), Narumiya
patent: 4433008 (1984-02-01), Schnable et al.

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