Foam semiconductor dopant carriers

Stock material or miscellaneous articles – Structurally defined web or sheet – Including aperture

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427 85, 427227, 427244, 4283115, 4283179, 428688, 428697, 428699, B32B 900

Patent

active

045268266

ABSTRACT:
New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopant, such as phosphorus, arsenic, antimony, boron gallium, aluminum, zinc, silicon, tellurium, tin and cadmium to the semiconductor host substrate; wherein the dopant carrier is comprised of a rigid, multiphase dimensionally stable refractory foam, formed through the impregnation, and subsequent thermal destruction of an open-celled organic polymer foam.

REFERENCES:
patent: 3124542 (1964-03-01), Kohn
patent: 3353994 (1967-11-01), Welsh et al.
patent: 3511689 (1970-05-01), Winklar
patent: 3666526 (1972-05-01), Ettinger et al.
patent: 4004933 (1977-01-01), Ravault
patent: 4171410 (1979-10-01), Frob
patent: 4258099 (1981-03-01), Narumiya
patent: 4433008 (1984-02-01), Schnable et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Foam semiconductor dopant carriers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Foam semiconductor dopant carriers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Foam semiconductor dopant carriers will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-381135

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.