Fluxless bonding of microelectronic chips

Details Fluxless bonding of microelectronic chips Fluxless bonding of microelectronic chips

1984-09-05

1987-02-24

Ramsey, Kenneth J.

Metal fusion bonding

Process

Metal to nonmetal with separate metallic filler

228220, 228200, 22826312, 219 85CM, 219 85A, B23K 102, B23K 120, B23K 3500

Patent

active

046451161

ABSTRACT:
Indium is used to bond semiconductor lasers to their heat-sinks without the presence of a corrosive liquid flux. Fluxless bonding is achieved in a vacuum chamber in reducing ambients of CO or H.sub.2. Low strain bonds are achieved at bonding temperatures of approximately 180.degree.-240.degree. C. in CO and 220.degree.-230.degree. C. in H.sub.2. Void-free bonds are achieved in CO at temperatures as low as about 205.degree. C. The technique is applicable to other microelectronic chips such as LEDs, for example.

REFERENCES:
patent: 2813191 (1957-11-01), Gray, III
patent: 3045093 (1962-07-01), Morgan et al.
patent: 3857161 (1974-12-01), Hutchins, IV
patent: 4142662 (1979-03-01), Holbrook et al.
patent: 4321617 (1982-03-01), Duda et al.
patent: 4389557 (1983-06-01), Devenyi et al.
Brusic et al., published abstract from IBM Technical Disclosure Bulletin, vol. 21, No. 4, Sep. 1978, p. 1688.

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