Fluorocarbon composition for use in plasma removal of photoresis

Details Fluorocarbon composition for use in plasma removal of photoresis Fluorocarbon composition for use in plasma removal of photoresis

1973-11-08

1976-04-20

Miller, Edward A.

Compositions

Oxidative bleachant, oxidant containing, or generative

Free halogen or oxy-halogen acid type

252 791, 252172, 252186, 252372, C09K 1300

Patent

active

039518434

ABSTRACT:
A organo-halide composition for use in the manufacture of semiconductor devices. To enable the removal of all the photoresist material along with its inorganic contamination, after development and etching of preselected portions of an oxide layer on a semiconductor slice, the material is exposed to a low pressure (few torr) rf generated "cold" plasma (200.degree.-300.degree.C), where the plasma is a homogeneous gaseous mixture of oxygen and organohalides. The organo-halide preferably is a binary or ternary mixture where each component preferably includes no more than two carbon atoms per molecule and is desirably fully halogensubstituted. One of the substituents should include predominantly chlorine, while the other should include a predominance of either fluorine or fluorine-bromine combinations.

REFERENCES:
patent: 1386497 (1921-08-01), Henning
patent: 2999817 (1961-09-01), Bower
patent: 3340199 (1967-09-01), Clay et al.
patent: 3455835 (1969-07-01), Burt
patent: 3615956 (1971-10-01), Irving et al.
patent: 3630926 (1971-12-01), Haase et al.
patent: 3654108 (1972-04-01), Smith
patent: 3795557 (1974-03-01), Jacob
patent: 3816198 (1974-06-01), La Combe

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