Fluorine-doped P type silicon

Details Fluorine-doped P type silicon Fluorine-doped P type silicon

1978-10-19

1980-12-16

Larkins, William D.

357 48, 357 50, 357 51, 357 58, H01L 29167

Patent

active

042400961

ABSTRACT:
A semiconductor device comprising a fluorine ion implantation region which is selectively formed in a semiconductor region and further activated. The fluorine ion implantation region is adapted for use as a high resistance layer or electrical isolation layer.

REFERENCES:
patent: 3440114 (1969-04-01), Harper
Kanamori et al., 23rd Japanese Applied Physics Meeting, Tokyo, No. 2 (1976), p. 131.

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