Compositions – Etching or brightening compositions
Reexamination Certificate
2006-09-05
2006-09-05
Chen, Kin-Chan (Department: 1765)
Compositions
Etching or brightening compositions
C438S745000
Reexamination Certificate
active
07101492
ABSTRACT:
Novel aqueous, acid etch solutions comprising a fluorinated surfactant are provided. The etch solutions are used with a wide variety of substrates, for example, in the etching of silicon oxide-containing substrates.
REFERENCES:
patent: 4055458 (1977-10-01), Niederprum et al.
patent: 4370254 (1983-01-01), Mitschke et al.
patent: 4582624 (1986-04-01), Enjo et al.
patent: 4795582 (1989-01-01), Ohmi et al.
patent: 5085786 (1992-02-01), Alm et al.
patent: 5478436 (1995-12-01), Winebarger et al.
patent: 5587513 (1996-12-01), Pohmer et al.
patent: 5688884 (1997-11-01), Baker et al.
patent: 5755989 (1998-05-01), Ishii et al.
patent: 5803956 (1998-09-01), Ohmi et al.
patent: 5944907 (1999-08-01), Ohmi
patent: 6310018 (2001-10-01), Behr et al.
patent: 6348157 (2002-02-01), Ohmi et al.
patent: 6491983 (2002-12-01), Moore et al.
patent: 6552090 (2003-04-01), Behr et al.
patent: 6890452 (2005-05-01), Parent et al.
patent: 2002/0089044 (2002-07-01), Simmons et al.
patent: 2003/0036569 (2003-02-01), Lamanna et al.
patent: 2003/0153780 (2003-08-01), Haniff et al.
patent: 2004/0089840 (2004-05-01), Parent et al.
patent: 30 38985 (1982-05-01), None
patent: 0 073 863 (1983-03-01), None
patent: 1037857 (1966-08-01), None
patent: WO 97/46283 (1997-12-01), None
patent: WO 01/30873 (2001-05-01), None
patent: WO 02/092211 (2002-11-01), None
patent: WO 2004/044091 (2004-05-01), None
patent: WO 2004/044092 (2004-05-01), None
S. Raghavan, “Surfactants in Wet Processing of Silicon”, International Symposium on Ultraclean Processing of Silicon Surfaces, (1997), pp. 317-322, Department of Materials Science and Engineering, University of Arizona, Tucson, AZ.
A. M. Almanza, “Adsorption of a Polyglycidol Surfactant From HF and BHF Solutions at Silicon/Solution and Solution/Air Interfaces”, Abstract, Symposium Q, Ultraclean processing of Semiconductor Structures and Devices, (Apr. 7-8, 1999), Materials Research Society [on line], [available and retrieved on the internet Jul. 30, 2002], <http://www.mrs.org/> pp. 1-2.
D. C. Burkman, “Understanding and Specifying the Sources and Effects of Surface Contamination in Semiconductor Processing”, Microcontamination, (Nov. 1988), pp. 57-62, 107-112.
K. M. Shah, “Change Your Surfactant Formula and Use Etch Baths for a Week”, Semiconductor International, (Oct. 1988), pp. 132-134.
P. D. Haworth, “Interaction of a Polyglycidol-Based Nonionic Surfactant with Silicon in Hydrofluoric Acid Solutions”, Journal of the Electrochemical Society, (1999), pp. 2284-2288, vol. 146, No. 6.
J. S. Jeon, “Effect of Temperature on the Interaction of Silicon with Nonionic Surfactants in Alkaline Solutions”, Journal of the Electrochemical Society, (Jan. 1996), pp. 277-283, vol. 143, No. 1.
J. S. Jeon, Electrochemical Investigation of Copper Contamination on Silicon Wafers from HF Solutions, Journal of the Electrochemical Society, (Sep. 1996), pp. 2870-2875, vol. 143, No. 9.
A. M. Almanza-Workman, “In Situ ATR-FTIR Analysis of Surfactant Adsorption onto Silicon from Buffered Hydrofluoric Acid Solutions”, Langmuir, (2000), pp. 3636-3640, vol. 16, No. 8, 2000 American Chemical Society.
M. Miyamoto, “Prevention of Microroughness Generation on the Silicon Wafer Surface in Buffered Hydrogen Fluoride by a Surfactant Addition”, Journal of the Electrochemical Society, (Oct. 1994), pp. 2899-2903, vol. 141, No. 10, The Electrochemical Society, Inc.
“ICKnowledge”, Aluminum Etch, 2001 IC Knowledge [on line], [retrieved from the internet on Apr. 14, 2003], <http://www.icknowledge.com/glossary/a.html>, pp. 1-4.
“Terra Universal Process Control Application Chart”, Terra Universal [on line], [retrieved from the internet on Apr. 14, 2003], <http://www.terrauniversal.com/products/wetprocess/processcontrol.html>, pp. 1-2.
“Metal Wet Bench wbmetal Operating Instructions”, “9.2 Aluminum Etch”, Stanford Nanofabrication Facility [on line], [last modified Aug. 14, 2000], [retrieved from the internet on Apr. 14, 2003], <http://snf.stanford.edu/Equipment/wbmetal/Operation.html>, pp. 1-14.
“Boe® Premixed Etchants, A complete range of useful thermal oxide etching rates”, Technical Data: Boe® Buffered Oxide Etchants, General Chemical, (2000), pp. 1-8.
R. A. Guenthner, “Surface Active Materials from Perfluorocarboxylic and Perfluorosulfonic Acids”, I & EC Product Research and Development, (Sep. 1962), pp. 165-169, vol. 1, No. 3.
H. Kikuyama, “Surface Active Buffered Hydrogen Fluoride Having Excellent Wettability for ULSI Processing”, IEEE Transactions on Semiconductor Manufacturing, (Aug. 1990), pp. 99-108, vol. 3, No. 3.
G. A. Olah, “Chapter 8 Fluorination with Onium Poly (Hydrogen Fluorides): The Taming of Anhydrous Hydrogen Fluoride for Synthesis”, Synthetic Fluorine Chemistry, (1992), pp. 163-204, John Wiley & Sons, Inc.
L. A. Zazzera, “XPS and SIMS Study of Anhydrous HF and UV/Ozone-Modified Silicon (100) Surfaces”, Journal of the Electrochemical Society, (Feb. 1989), pp. 484-491, vol. 136, No. 2.
Flynn Richard M.
Lamanna William M.
Moore George G. I.
Parent Michael J.
Qiu Zai-Ming
3M Innovative Properties Company
Chen Kin-Chan
Kokko Kent S.
LandOfFree
Fluorinated surfactants for aqueous acid etch solutions does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fluorinated surfactants for aqueous acid etch solutions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fluorinated surfactants for aqueous acid etch solutions will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3530043