Fluorinated, p-doped microcrystalline silicon semiconductor allo

Details Fluorinated, p-doped microcrystalline silicon semiconductor allo Fluorinated, p-doped microcrystalline silicon semiconductor allo

1984-11-02

1986-07-15

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Panel or array

136258, 252 623R, 2525011, 357 30, 357 59, 420578, 420903, 427 39, 427 74, 427 86, H01L 3106, H01L 3118

Patent

active

046008012

ABSTRACT:
A fluorinated, p-doped microcrystalline semiconductor alloy material; electronic devices incorporating said p-doped material; and the method for fabricating said p-doped material.

REFERENCES:
patent: 4398343 (1983-08-01), Yamazaki
patent: 4409134 (1983-10-01), Yamazaki
patent: 4433202 (1984-02-01), Maruyama et al.
patent: 4496788 (1985-01-01), Hamakawa et al.
G. Bruno et al, Thin Solid Films, vol. 106, pp. 145-152 (1983).
Y. Osaka et al, Chapter 3.3, pp. 80-97 of JARECT vol. 16, Amorphous Semiconductor Technologies & Devices (1984) Y. Hamakawa, editor, Omsha Ltd & North-Holland Pub. Co.

Affiliated with

Also associated with

Rating

Fluorinated, p-doped microcrystalline silicon semiconductor allo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fluorinated, p-doped microcrystalline silicon semiconductor allo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fluorinated, p-doped microcrystalline silicon semiconductor allo will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1741991