Fluorinated hard mask for micropatterning of polymers

Details Fluorinated hard mask for micropatterning of polymers Fluorinated hard mask for micropatterning of polymers

2006-05-09

2006-05-09

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S774000

Reexamination Certificate

active

07042091

ABSTRACT:
The present invention discloses the formation of a hard mask layer in an organic polymer layer by modifying at least locally the chemical composition of a part of said exposed organic low-k polymer. This modification starts from an exposed surface of the polymer and extends into the polymer thereby increasing the chemical resistance of the modified part of the polymer. As a result, this modified part can be used as a hard mask or an etch stop layer for plasma etching.

REFERENCES:
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patent: 6309956 (2001-10-01), Chiang et al.
patent: 6319824 (2001-11-01), Lee et al.
patent: 6323117 (2001-11-01), Noguchi

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