Fluidic MEMS device

Chemical apparatus and process disinfecting – deodorizing – preser – Control element responsive to a sensed operating condition

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C422S050000, C422S068100, C422S081000, C422S082000, C422S105000, C422S105000, C422S105000, C436S043000, C436S052000, C436S053000, C436S174000, C436S177000, C436S180000

Reexamination Certificate

active

10606023

ABSTRACT:
A fluidic micro electro-mechanical system (MEMS) device is described. In one aspect, at least one at least partially covered fluidic channel is formed between a polymer layer and a polymer substrate as the polymer layer is deposited on the substrate. The partially covered fluidic channel is fabricated as a unitary polymer layer structure. In one implementation, a strong exposure process is applied to the polymer layer to create a deep cross-linked polymer region. A weak exposure process is applied to the polymer layer to create a shallow cross-linked polymer region.

REFERENCES:
patent: 5375979 (1994-12-01), Trah
patent: 2002/0098097 (2002-07-01), Singh
patent: 2002/0117517 (2002-08-01), Unger
patent: 2003/0007715 (2003-01-01), Loock
patent: 2003/0017467 (2003-01-01), Hooper
patent: 1 283 563 (2003-02-01), None
patent: WO 98/45693 (1998-10-01), None
patent: WO 01/38844 (2001-05-01), None
patent: WO 01/96958 (2001-12-01), None
patent: WO 02/43615 (2002-06-01), None
J.H.Daniel, “Silicon microchambers for DNA amplification”, Sensors and Actuators vol. 71, No. 1-2, Nov. 1, 1998, pp. 81-88.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Fluidic MEMS device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fluidic MEMS device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fluidic MEMS device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3843615

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.