Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2005-09-20
2005-09-20
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S456000, C156S105000, C156S156000, C156S285000
Reexamination Certificate
active
06946360
ABSTRACT:
An improved method of bonding involves using direct fluid pressure to press together the layers to be bonded. Advantageously one or more of the layers are sufficiently flexible to provide wide area contact under the fluid pressure. Fluid pressing can be accomplished by sealing an assembly of layers to be bonded and disposing the assembly in a pressurized chamber. It can also be accomplished by subjecting the assembly to jets of pressurized fluid. The result of this fluid pressing is reduction of voids and enhanced uniformity over an enlarged area.
REFERENCES:
patent: 3922134 (1975-11-01), Kupfrian
patent: 4504341 (1985-03-01), Radzwill et al.
patent: 4642255 (1987-02-01), Dlubak
patent: 4747896 (1988-05-01), Anastasie
patent: 5370760 (1994-12-01), Mori et al.
patent: 5405667 (1995-04-01), Heider
patent: 5427599 (1995-06-01), Greschner et al.
patent: 5466146 (1995-11-01), Fritz et al.
patent: 5643522 (1997-07-01), Park
patent: 5648109 (1997-07-01), Gutowski et al.
patent: 5863452 (1999-01-01), Harshberger, Jr. et al.
patent: 6045927 (2000-04-01), Nakanishi et al.
patent: 6121103 (2000-09-01), Tully et al.
patent: 6245161 (2001-06-01), Henley et al.
patent: 6319745 (2001-11-01), Bertin et al.
patent: 6425972 (2002-07-01), McReynolds
patent: 6444160 (2002-09-01), Bartoli
patent: 6533986 (2003-03-01), Fosaaen et al.
Ghyka Alexander
Nanonex Corporation
Polster Lieder Woodruff & Lucchesi L.C.
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