Fluid-filled and gas-filled semiconductor packages

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437214, 437215, 437216, 437219, H01L 2160

Patent

active

054058082

ABSTRACT:
Improved thermal and/or electrostatic discharge characteristics are realized in cavity-type semiconductor device assemblies by filling the cavity with either a thermally conductive fluid and/or an arc suppressing gas, or combinations thereof. The interior of the cavity, including the die, leads extending into the cavity, and connections between the die and the leads may be coated to provide protection from corrosive and/or electrical characteristics of the cavity-filling fluid (liquid or gas). The fluid may be introduced through a hole in a lid sealing the cavity, and the cavity is filled sufficiently that the fluid is in contact with the die at various spatial orientations of the package. A thermally-conductive fluid substantially filling the cavity provides improved thermal conduction from the die to the package body without the mechanical stress problems (e.g., thermally induced cracking) ordinarily associated with bonding solid materials to the die. An arc-suppressing gas filling the cavity provides significant suppression of electrical discharges, thereby producing a packaged semiconductor device with improved electrostatic characteristics.

REFERENCES:
patent: 3411049 (1966-03-01), Trincossi et al.
patent: 3739234 (1973-06-01), Bylund et al.
patent: 3792318 (1974-02-01), Fries et al.
patent: 3852806 (1974-12-01), Corman et al.
patent: 3980133 (1976-09-01), Mitsuoka et al.
patent: 3986550 (1976-10-01), Mitsuoka
patent: 4047198 (1977-09-01), Sekhon et al.
patent: 4092697 (1978-05-01), Spaight
patent: 4145708 (1979-03-01), Ferro et al.
patent: 4323914 (1982-04-01), Berndimaier et al.
patent: 4619316 (1986-10-01), Nakayama et al.
patent: 4730665 (1988-03-01), Cutchaw
patent: 4912548 (1990-03-01), Shanker et al.
patent: 4961106 (1990-10-01), Butt et al.
patent: 5019892 (1991-05-01), Grabbe
patent: 5031072 (1991-07-01), Malhi et al.
patent: 5095404 (1992-03-01), Chao
patent: 5130889 (1992-07-01), Hambergen et al.
patent: 5161090 (1992-11-01), Crawford et al.
patent: 5209803 (1993-05-01), Powell
patent: 5243756 (1993-09-01), Hamburgen et al.
"Low Temperature and Atmospheric Pressure CVD Using Polysiloxane, OMCTS, and Ozone", by Fujino et al., J. Electrochem. Soc., vol. 138, No. 12, Dec. 1991, pp. 3727-3732.
"Excimer Laser CVD of Sillcon Oxide on GaAs: A Comparison With Desposition On c-Si", by Gonzalez et al., Applied Surface Science, vol. 54. pp. 108-111, Jan. 1992.
"Deposition of Sio/sub 2/ films from ArF Laser Photolysis of SiH/sub 4//N/sub 2/0 Mixtures", by Tsuji et al. Japanese Journal of Applied Physics, vol. 30, Issue 11A, pp. 2868-2872, Nov. 1991.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Fluid-filled and gas-filled semiconductor packages does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fluid-filled and gas-filled semiconductor packages, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fluid-filled and gas-filled semiconductor packages will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1538285

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.