Drying and gas or vapor contact with solids – Process – With contacting of material treated with solid or liquid agent
Reexamination Certificate
1998-09-29
2001-06-05
Gravini, Stephen (Department: 2162)
Drying and gas or vapor contact with solids
Process
With contacting of material treated with solid or liquid agent
C034S366000, C034S370000, C034S374000, C034S435000
Reexamination Certificate
active
06240655
ABSTRACT:
BACKGROUND OF THE INVENTION
The invention relates generally to spherical-shaped semiconductor integrated circuit manufacturing systems, and more particularly, to a fluid exchange system, suitable for use in such manufacturing systems, for purging a first fluid from a process flow comprised of the first fluid and spherical-shaped semiconductors and injecting a second fluid into the process flow.
Conventional integrated circuits, or “chips,” are formed from a flat surface semiconductor wafer. The semiconductor wafer is first manufactured in a semiconductor material manufacturing facility and is then provided to a fabrication facility. At the latter facility, several layers are processed onto the semiconductor wafer surface. Once completed, the wafer is then cut into one or more chips and assembled into packages. Although the processed chip includes several layers fabricated thereon, the chip still remains relatively flat.
A fabrication facility is relatively expensive due to the enormous effort and expense required for creating flat silicon wafers and chips. For example, manufacturing the wafers requires several high-precision steps including creating rod-form polycrystalline semiconductor material; precisely cutting ingots from the semiconductor rods; cleaning and drying the cut ingots; manufacturing a large single crystal from the ingots by melting them in a quartz crucible; grinding, etching, and cleaning the surface of the crystal; cutting, lapping and polishing wafers from the crystal; and heat processing the wafers. Moreover, the wafers produced by the above processes typically have many defects which are largely attributable to the difficulty in making a single, highly pure crystal due to the above cutting, grinding and cleaning processes as well as due to the impurities, including oxygen, associated with containers used in forming the crystals. These defects become more and more prevalent as the integrated circuits formed on these wafers become smaller.
Another major problem associated with modern fabrication facilities for flat chips is that they require extensive and expensive equipment. For example, dust-free clean rooms and temperature-controlled manufacturing and storage areas are necessary to prevent the wafers and chips from defecting and warping. Also, these types of fabrication facilities suffer from a relatively inefficient throughput as well as an inefficient use of the silicon. For example, facilities using in-batch manufacturing, where the wafers are processed by lots, must maintain huge inventories to efficiently utilize all the equipment of the facility. Also, because the wafers are round, and the completed chips are rectangular, the peripheral portion of each wafer cannot be used.
Still another problem associated with modern fabrication facilities is that they do not produce chips that are ready to use. Instead, there are many additional steps that must be completed, including cutting and separating the chip from the wafer; assembling the chip to a lead frame which includes wire bonding, plastic or ceramic molding and cutting and forming the leads, positioning the assembled chip onto a printed circuit board; and mounting the assembled chip to the printed circuit board. The cutting and assembly steps introduce many errors and defects due to the precise requirements of such operations. In addition, the positioning and mounting steps are naturally two-dimensional in character, and therefore do not support curved or three dimensional areas.
Therefore, due to these and various other problems, only a few companies in the world today can successfully manufacture conventional flat chips. Furthermore, the chips must bear a high price to cover the costs of manufacturing, as well as the return on initial capital and investment.
In co-pending U.S. Pat. No. 5,955,776 filed on May 16, 1997, assigned to the same assignee as the present application and hereby incorporated by reference as if reproduced in its entirety, a method and apparatus for manufacturing spherical-shaped semiconductor integrated circuits is disclosed. As disclosed in the aforementioned patent application, the manufacturing process by which a spherical-shaped semiconductor integrated circuit is produced may include a variety of processing steps. Among these are: de-ionized water cleaning, developing and wet etching; diffusion, oxidation and deposition of films; coating; exposure; plasma etching, sputtering and ion implantation; ashing; and epitaxial growth. Many of these steps involve exposing a spherical-shaped semiconductor to a process fluid. For example, a film having a desired composition and thickness may be formed on the surface of the spherical-shaped semiconductors by exposing the spherical-shaped semiconductors to a first process fluid, typically, a gas, having a selected composition at a selected pressure and temperature. To ensure that formation of spherical-shaped semiconductor integrated circuits proceeds as designed, when such a process step is complete, it is often advisable to remove the first process fluid from further contact with the spherical-shaped semiconductors, for example, using a purging process. Failure to do so may result in unwanted chemical reactions, for example, the deposition of an overly thick layer of material, on the surface of the spherical-shaped semiconductors. Additionally, as the manufacturing process for spherical-shaped semiconductor integrated circuits often incorporates a multitude of processing steps such as the ones previously described, to aid in the efficiency of the manufacturing process and/or to assist in the transport of the spherical-shaped semiconductors between processing stations, it is often desirable to replace the removed process fluid with a second process fluid.
Further complicating the manufacturing process for spherical-shaped semiconductor integrated circuits are the special handling requirements which must be afforded the circuits during the manufacture thereof. Unlike conventional integrated circuits formed from flat surface semiconductor wafers, the spherical-shaped semiconductor integrated circuits produced from spherical-shaped semiconductors consume the entire surface area of the spherical-shaped semiconductors. Thus, unlike conventional integrated circuits which may be grasped along bottom or side surfaces thereof, grasping or otherwise contacting spherical-shaped semiconductor during the manufacturing process may result in significant damage thereto. Thus, many of the processing techniques used to manufacture conventional integrated circuits are unsuitable for use in the manufacture of spherical-shaped semiconductor integrated circuits.
Thus, it would be desirable to provide a fluid exchange system, capable of purging a first fluid from and injecting a second fluid into a process flow, suitable for use in spherical-shaped semiconductor integrated circuit manufacturing processes. It is, therefore, the object of the invention to provide such a fluid exchange system.
SUMMARY OF THE INVENTION
In one embodiment, the present invention is of a method for post-processing treatment of a descending output flow comprised of a first process fluid such as a first gas and particulate matter such as a spherical-shaped semiconductor material which is generated at a first processing station of a manufacturing system. A first, ascending, flow comprised of a second process fluid such as a second gas and having an ascending velocity greater than a descending velocity of the descending output flow is injected in opposition to the descending output flow. After contacting the descending output flow, the ascending flow is removed. After the descending output flow contacts the ascending flow, the ascending flow is comprised of the first process fluid and a first portion of the second process fluid and the descending output flow is comprised of a second portion of the second process fluid and the particulate matter. In one aspect thereof, a second flow of the second process fluid is injected into the descending output flow comprised of the second proces
Ball Semiconductor Inc.
Gravini Stephen
Haynes and Boone LLP
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