Semiconductor device manufacturing: process – Manufacture of electrical device controlled printhead
Reexamination Certificate
2006-05-02
2006-05-02
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Manufacture of electrical device controlled printhead
Reexamination Certificate
active
07037736
ABSTRACT:
The present invention includes as one embodiment a method for fabricating a portion of an ink-jet printhead made of a silicon substrate, the method including selectively etching active region contact vias of a field effect transistor that has a conducting channel that is insulated from a gate terminal by a layer of oxide along with separate substrate contact vias using a single mask and forming the substrate contact vias simultaneously with the active region contact vias during the selective etching.
REFERENCES:
patent: 5063655 (1991-11-01), Lamey et al.
patent: 5943076 (1999-08-01), Burke et al.
patent: 6632710 (2003-10-01), Takahashi
patent: 2002/0130371 (2002-09-01), Bryant et al.
Bengali Sadiq S.
Chavarria Victorio A.
Enck Ronald L.
Hoang Quoc
Nelms David
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