Patent
1985-03-18
1986-06-24
Edlow, Martin H.
357 55, H01L 2906, H01L 2966
Patent
active
045970025
ABSTRACT:
Three-dimensional diode arrays have been produced in semiconductor wafers by a two-step process involving laser drilling and solid-state diffusion.
Holes are first produced in the wafer in various arrays by laser drilling. Under suitable conditions, laser drilling causes little or no damage to the wafer. Cylindrical P-N junctions are then formed around the laser-drilled holes by diffusing an impurity into the wafer from the walls of the hole. A variety of distinctly different ISFET devices is produced.
REFERENCES:
patent: 4056726 (1977-11-01), Harchol
patent: 4471369 (1984-09-01), Anthony et al.
patent: 4527183 (1985-07-01), Anthony et al.
Anthony, "Forming Elec. Interconnections Through Semi Wafers," J. Appl. Physics, 52 (8), 5340 (1981).
Anthony, "Forming Feed Throughs in Laser-Drilled Holes in Semi Wafers by Double-Sided Spattering, "IEEE Trans. CHMT, CHMT-5(1), 1971 (1982).
Anthony, "Diodes Formed by Laser Drilling and Diffusion, "J. Appl. Phys., 53 (12), 9154 (1982).
Davis Jr. James C.
Edlow Martin H.
Fallick E.
General Electric Company
Magee Jr. James
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