Flow sensor

Measuring and testing – Volume or rate of flow – Thermal type

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

G01F 168

Patent

active

044780761

ABSTRACT:
A flow sensor comprising a pair of thin film heat sensors and a thin film heater is disclosed. A base supports the sensors and heater out of contact with the base with the sensors disposed on opposite sides of the heater. The heater is operated at a constant temperature above ambient temperature under both flow and no-flow conditions. Also disclosed is a flow sensor wherein a portion of the depression is devoid of a side wall.

REFERENCES:
patent: 3758830 (1973-09-01), Jackson
patent: 3881181 (1975-04-01), Khaiezadeh
patent: 3992940 (1976-11-01), Platzer, Jr.
patent: 4011745 (1977-03-01), Gatos et al.
patent: 4134095 (1979-01-01), Reddy
patent: 4182937 (1980-01-01), Greenwood
patent: 4229979 (1980-10-01), Greenwood
patent: 4244225 (1981-01-01), Greenwood
patent: 4293373 (1981-10-01), Greenwood
patent: 4305298 (1981-12-01), Greenwood
patent: 4343768 (1982-08-01), Kimura
Malin et al., "Mass Flow Meter" in IBM Disclosure Bulletin vol. 21 #8, p. 3227.
Pugacz-Muraszkiewicz, I. J. "Detection of Discontinuities in Passivating Layers on Silicon by NaOH Anisotropic Etch," IBM J. Res. Develop., Sep., 1972, pp. 523-529.
Petersen, K. E. "Micromechanical Light Modulator Array Fabricated on Silicon," Applied Physics Letters, vol. 31, No. 8, Oct. 15, 1977, pp. 521-523.
Terry, Stephen C., et al. "A Pocket-Sized Personal Air Contaminant Monitor," 175th National Meeting of the American Chemical Society, Mar. 15, 1978.
Bassous, Ernest, "Fabrication of Novel Three-Dimensional Microstructures by the Anisotropic Etching of (100) and (110) Silicon," IEEE Transactions on Electron Devices, Vo. Ed. 25, No. 10, Oct. 1978, pp. 1178-1185.
Petersen, K. E. "Dynamic Micromechanics on Silicon: Techniques and Devices," IEEE Transactions on Electron Devices, Vo. Ed. 25, No. 10, Oct. 1978, pp. 1241-1250.
Peterson, K. E. "Micromechanical Membrane Switches on Silicon," IBM J. Res. Develop., vol. 23, No. 4, Jul. 1979, pp. 376-385.
Roylance, Lynn M. "A Batch-Fabricated Silicon Accelerometer," IEEE Transaction on Electron Devices, vol. Ed. 26, No. 12, Dec. 1979, pp. 1911-1917.
Terry, Stephen C., et al. "A Gas Chromatographic Air Analyzer Fabricated on a Silicon Wafer," IEEE Transactions on Electron Devices, vol. Ed. 26, No. 12, Dec. 1979, pp. 1880-1886.
Jolly, Richard D., et al. "Miniature Cantilever Beams Fabricated by Anisotropic Etching of Silicon," J. Electrochem. Soc., vol. 127, No. 12, Dec. 1980, pp. 2750-2754.
Teschler, Leland, "Ultraminiature," Machine Design, Jan. 8, 1981, pp. 112-117.
Kimura, M. "Microheater and Microbolometer Using Microbridge of SiO.sub.2 Film on Silicon," Electronics Letters, vol. 17, No. 2, Jan. 22, 1981, pp. 80-82.
Jackson, T. N. et al. "An Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures," IEEE Transactions on Electron Devices, vol. EDL-2, No. 2, Feb. 1981, pp. 44-45.
Van Putten, A. F. P. et al. "Integrated Silicon Anemometer," Electronics Letters, vol. 10, No. 21, Oct. 17, 1974, pp. 425-426.
Van Riet, R. W. M. et al. "Integrated Direction-Sensitive Flowmeter," Electronics Letters, vol. 12, No. 24, Nov. 25, 1976, pp. 647-648.
Rahnamai, H. et al. "Pyroelectric Anemometers," 1980 International Electron Devices Meeting, Washington, D.C. Dec. 8-10, 1980, pp. 680-684.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Flow sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Flow sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flow sensor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1592710

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.