Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-01-28
2011-11-01
Dinh, Son (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C257S314000, C257S239000
Reexamination Certificate
active
08050105
ABSTRACT:
In designing a FLOTOX EEPROM of a dual cell type, a consideration should be given to the layout of cells for microminiaturization of the FLOTOX EEPROM. The FLOTOX EEPROM of the dual cell type includes two paired floating gates (25a,25b), two tunnel windows (33a,33b) a shared source (27), a shared control gate (26), select gates (29a,29b), and a shared drain28. Thus, a higher reliability design and a higher breakdown voltage design are achieved for the FLOTOX EEPROM of the dual cell type.
REFERENCES:
patent: 5471422 (1995-11-01), Chang et al.
patent: 6628549 (2003-09-01), Shukuri et al.
patent: 2004/0264227 (2004-12-01), Kojima et al.
patent: 8180696 (1996-07-01), None
patent: 9223780 (1997-08-01), None
patent: 10-056091 (1998-02-01), None
patent: 2001-257324 (2001-09-01), None
patent: 2005-020349 (2005-01-01), None
Dinh Son
Nguyen Nam
Rabin & Berdo P.C.
Rohm & Co., Ltd.
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