FLOTOX-type EEPROM

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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Details

C257S314000, C257S239000

Reexamination Certificate

active

08050105

ABSTRACT:
In designing a FLOTOX EEPROM of a dual cell type, a consideration should be given to the layout of cells for microminiaturization of the FLOTOX EEPROM. The FLOTOX EEPROM of the dual cell type includes two paired floating gates (25a,25b), two tunnel windows (33a,33b) a shared source (27), a shared control gate (26), select gates (29a,29b), and a shared drain28. Thus, a higher reliability design and a higher breakdown voltage design are achieved for the FLOTOX EEPROM of the dual cell type.

REFERENCES:
patent: 5471422 (1995-11-01), Chang et al.
patent: 6628549 (2003-09-01), Shukuri et al.
patent: 2004/0264227 (2004-12-01), Kojima et al.
patent: 8180696 (1996-07-01), None
patent: 9223780 (1997-08-01), None
patent: 10-056091 (1998-02-01), None
patent: 2001-257324 (2001-09-01), None
patent: 2005-020349 (2005-01-01), None

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