Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2008-04-02
2011-12-06
Sofocleous, Alexander (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S182000, C365S185280
Reexamination Certificate
active
08072807
ABSTRACT:
A FLOTOX EEPROM of the invention includes: a plurality of floating gates11arranged in array, each having a tunnel window12and allowing electron injection and extraction via the tunnel window; a plurality of select gates13provided in one-on-one correspondence to the plural floating gates11; a control gate16shared by the plural floating gates11; a source17shared by the plural floating gates11; and a drain18shared by the plural floating gates11. Therefore, the FLOTOX EEPROM does not encounter the decrease of junction breakdown voltage of a drain region, allowing the application of sufficiently high write voltage. Further, cell area can be reduced.
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Rabin & Berdo P.C.
Rohm & Co., Ltd.
Sofocleous Alexander
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