FLOTOX type EEPROM

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S182000, C365S185280

Reexamination Certificate

active

08072807

ABSTRACT:
A FLOTOX EEPROM of the invention includes: a plurality of floating gates11arranged in array, each having a tunnel window12and allowing electron injection and extraction via the tunnel window; a plurality of select gates13provided in one-on-one correspondence to the plural floating gates11; a control gate16shared by the plural floating gates11; a source17shared by the plural floating gates11; and a drain18shared by the plural floating gates11. Therefore, the FLOTOX EEPROM does not encounter the decrease of junction breakdown voltage of a drain region, allowing the application of sufficiently high write voltage. Further, cell area can be reduced.

REFERENCES:
patent: 5218568 (1993-06-01), Lin et al.
patent: 5267209 (1993-11-01), Yoshida
patent: 5284786 (1994-02-01), Sethi
patent: 5394002 (1995-02-01), Peterson
patent: 5404037 (1995-04-01), Manley
patent: 6878991 (2005-04-01), Forbes
patent: 7492639 (2009-02-01), La Rosa
patent: 2005/0136597 (2005-06-01), Shinada et al.
patent: 2007/0018234 (2007-01-01), Chindalore et al.
patent: 2010/0002524 (2010-01-01), Sekiguchi
patent: 4123471 (1992-04-01), None
patent: 4364077 (1992-12-01), None
patent: 9-036335 (1997-02-01), None
patent: 2005-005731 (2005-01-01), None
patent: 2005-183763 (2005-07-01), None
patent: 2007-013197 (2007-01-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

FLOTOX type EEPROM does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with FLOTOX type EEPROM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and FLOTOX type EEPROM will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4301375

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.