Floating MOS capacitor

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – Utilizing a three or more electrode solid-state device

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Details

327566, 257312, 257296, H01L 2500

Patent

active

059260645

ABSTRACT:
A structure is provided to create a voltage-independent capacitive structure using a typical MOS fabrication process. The capacitive structure includes two FET devices connected in series by having their source, drain, and body terminals all coupled together into a common node. A biasing circuit that includes a current generator and a current mirror biases the common node so that a constant capacitance is maintained across the gate terminals of the two serially connected FET devices, independent of the applied voltage.

REFERENCES:
patent: 3798508 (1974-03-01), Kohashi
patent: 4453090 (1984-06-01), Sempel
patent: 4786828 (1988-11-01), Hoffman
patent: 5557235 (1996-09-01), Koike

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