Floating gate type semiconductor memory device

Details Floating gate type semiconductor memory device Floating gate type semiconductor memory device

1987-12-22

1989-05-30

Moffitt, James W.

Static information storage and retrieval

Floating gate

Particular biasing

36518909, 357 235, G11C 1140, G11C 1700

Patent

active

048357405

ABSTRACT:
The invention provides a semiconductor memory device including a semiconductor substrate of a first conductivity type, comprising, a gate insulating film on a channel region of the semiconductor substrate, a floating gate on the gate insulating film, a floating gate insulating film on the floating gate, a control gate on the floating gate insulating film, first and second impurity regions of a second conductivity type in the semiconductor substrate and being adjacent to the gate insulating film, a third impurity region of the second conductivity type more lightly doped than the first and second impurity regions, being adjacent to the channel region, and a fourth impurity region of the second conductivity type more highly doped than the third impurity region and more lightly doped then the first and second impurity regions in the surface region of the third impurity region.

REFERENCES:
patent: 4080618 (1978-03-01), Tango et al.
patent: 4661833 (1987-04-01), Mizutani
patent: 4665418 (1987-05-01), Mizutani
patent: 4672409 (1987-06-01), Takei et al.
patent: 4750024 (1988-06-01), Schreck
"Profiled Lightly Doped Drain (PLDD) Structure for High Reliable NMOS-FETs", Symposium on VLSI Technology Digest of Technical Papers (1985), p. 118, Y. Toyoshima et al. (FIG. 2 and lines 19-31 of left-lower portion of p. 118.)

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