Floating gate type erasable and programmable read only memory ce

Details Floating gate type erasable and programmable read only memory ce Floating gate type erasable and programmable read only memory ce

1991-11-13

1994-05-31

Fourson, George

Fishing, trapping, and vermin destroying

437 35, H01L 21265

Patent

active

053169611

ABSTRACT:
Disclosed is an improved floating gate type EPROM in which: the overlying P-type drain diffusion layer extends apart from the P-type channel stopper and ends at a location below somewhat inside the edge of the floating gate in the P-type semiconductor substrate; and the underlying N-type drain diffusion layer extends short of the terminal end of the overlying drain diffusion layer. This arrangement has the effect of increasing the breakdown voltage and the drain-to-semiconductor substrate diode characteristic of the device. Also, disclosed are a method of making such improved floating gate type EPROM and an electrically erasing and writing method for floating gate type EPROMS.

REFERENCES:
patent: 4142926 (1979-03-01), Morgan
patent: 4849369 (1989-07-01), Jeuch et al.
patent: 4851361 (1989-07-01), Schumann et al.
patent: 5045488 (1991-09-01), Yeh
patent: 5073514 (1991-12-01), Ito et al.
patent: 5190887 (1993-03-01), Tang et al.

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