Floating gate type EEPROM with a substrate region used for the c

Details Floating gate type EEPROM with a substrate region used for the c Floating gate type EEPROM with a substrate region used for the c

1984-02-22

1987-02-10

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 41, 357 59, 365185, H01L 2978, H01L 2994, H01L 2946

Patent

active

046426736

ABSTRACT:
A semiconductor memory device having a floating gate transistor and an insulated gate transistor, is provided a p-type semiconductor substrate, first, second and third semiconductor regions which are formed in the surface area of the substrate, a floating gate electrode capacitively coupled through a first insulating layer to a current path including the first and second semiconductor regions, a control gate electrode capacitively coupled through a second insulating layer to the floating gate electrode, and an insulated gate electrode which is formed through a first insulating layer on that portion of the substrate which lies between the second and third semiconductor regions. The first insulating layer of the semiconductor memory device is formed on that portion of the substrate which lies between the first and second semiconductor regions. The control gate electrode is a fourth semiconductor region which is formed in the surface area of the substrate. A second insulating layer is formed of a very thin monocrystalline oxide layer, and is formed on the fourth semiconductor region. The current path of the floating gate transistor is perpendicular to that of the insulated gate transistor substantially in the same plane.

REFERENCES:
patent: 3919711 (1975-11-01), Chou
patent: 4019197 (1977-04-01), Lohstroh et al.
patent: 4288863 (1981-09-01), Adam
patent: 4379343 (1983-04-01), Moyer
patent: 4402064 (1983-08-01), Arakawa
patent: 4404577 (1983-09-01), Cranford et al.
patent: 4425631 (1984-01-01), Adam
Kuo et al., "An 80 ns 32K EEPROM Using the FETMOS Cell," IEEE Journal of Solid-State Circuits, vol. SC-17, No. 5, Oct. 1982.

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