Floating-gate transistor with a non-linear intergate dielectric

Details Floating-gate transistor with a non-linear intergate dielectric Floating-gate transistor with a non-linear intergate dielectric

1988-03-21

1989-12-19

LaRoche, Eugene R.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 24, 365117, 365145, 365228, H01L 2878, G11C 1122

Patent

active

048886300

ABSTRACT:
A non-volatile memory cell having a floating-gate transistor is disclosed, which has a ferroelectric material for the dielectric between the floating gate electrode and the control gate electrode. The ferroelectric material provides for non-linear capacitance characteristics with voltage, and is polarizable into two states by the application of voltage across the capacitor plates of sufficient magnitude. The memory cell is read by applying a voltage to the control gate electrode which will sufficiently be capacitively coupled to the floating gate electrode to turn on the transistor when the ferroelectric material is in the programmed state, but which will not be sufficiently coupled in the erased state to turn the transistor on. The ferroelectric material may be incorporated directly above the floating gate transistor electrode, or may be formed remotely from the transistor between two metal layers, the lower of which is connected to the floating gate electrode.

REFERENCES:
patent: 4144591 (1979-03-01), Brody
Evans et al., "The Operation of a Non-Volatile Ferroelectric RAM," IEEE Non-Volatile Semiconductor Memory Workshop, Paper 1.5 (2/22/88).
Fisch, et al., "A Quantitative Approach Towards Measuring Thin Film Ferroelectric Reliability," IEEE Non-Volatile Semiconductor Memory Workshop, Paper 2.1 (2/22/88).
Eaton, "Non-Volatile Applications of Ferroelectric Technology", IEEE Non-Volatile Semiconductor Memory Workshop, Paper 1.7 (2/22/88).

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