Floating gate solid-state storage device

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Details

357 54, 357 59, H01L 2978

Patent

active

041625048

ABSTRACT:
A floating gate semiconductor device is described wherein the floating gate member does not extend completely across the channel region and thus avoids alignment with the edges of the source and drain regions. The lateral displacement of the edge of the floating gate from the drain region permits stored charge on the drain to be undisturbed in the event avalanche breakdown occurs at the channel-drain junction.

REFERENCES:
patent: 3984822 (1976-10-01), Simko et al.
patent: 4057820 (1977-11-01), Gallagher

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