Floating-gate memory cell with tailored doping profile

Details Floating-gate memory cell with tailored doping profile Floating-gate memory cell with tailored doping profile

1986-07-23

1990-12-18

Hille, Rolf

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 234, 357 2312, 365184, H01L 2968, H01L 2910, H01L 2978, G11C 1134

Patent

active

049790056

ABSTRACT:
A floating-gate memory cell with an improved doping profile. After the substrate background doping has been set to a desired level (e.g. by a high dose implant and long drive in), two implants of opposite type are used to shape the doping profile of the floating-gate transistor. A boron implant is used to provide significantly increased p-type doping underneath the channel, at depths near the midpoint of the source/drain diffusions. A shallow arsenic implant partially compensates this boron implant at the surface, to set the threshold voltage as desired. The region of substantially increased p-type doping helps to suppress the lateral parasitic bipolar transistor which can otherwise suppress programmation, and also (by providing increased doping at the drain boundary) increases hot electron generation.

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W. Muller et al., "Short-Chan., MOS Trans in Ava-Mult. Reg.", IEEE Trans. on Elec. Dev., vol. ED-29, #11, Nov. 1982, pp. 1778-1784.

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