Floating-gate memory cell

Static information storage and retrieval – Magnetic bubbles – Guide structure

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 54, 357 41, 365185, H01L 2978, G11C 1134

Patent

active

045970009

ABSTRACT:
A memory cell includes a selection transistor and a memory transistor formed as insulated gate field effect transistors. The transistors are formed on a substrate with a channel for the selection transistor coupled to a channel for the memory transistor. A layer of oxide overlies both transistors. The channels are formed between a programming line and a reading line formed in the substrate. A thin film window in the oxide overlies a region of the programming line. An insulated, floating gate is formed overlying the window and the channel of the memory transistor. A gate electrode overlies the floating gate and the channel of the selection transistor.

REFERENCES:
patent: 4016588 (1977-04-01), Ohya et al.
patent: 4305083 (1981-12-01), Gutierrez
patent: 4412311 (1983-10-01), Miccoli et al.
patent: 4451904 (1984-05-01), Sugiura
IEEE Transactions on Electron Devices, vol. ED. 24, #5, May 1977, pp. 594-599, by Gosney.
IBM Technical Disclosure Bulletin "Electrically Rewritable Nonvolatile Memory", vol. 16, #2, Jul. 73; James.
IBM Technical Disclosure Bulletin, vol. 16, #2, Jul. 73, "Floating Gate FET Memory" by Chiu, Pan, Tsang.
IBM Technical Disclosure Bulletin by vol. 17, #8, Jan. 75, "Electrically Erasable Floating Gate", FET Memory Cell, Anantha.
Electronic Design, Nov. 8, 1980--Tom Williams "Memory, GaAs Technologies Keep Improving".

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Floating-gate memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Floating-gate memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Floating-gate memory cell will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2087026

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.