Floating gate JFET image sensor

Details Floating gate JFET image sensor Floating gate JFET image sensor

1989-03-01

1992-08-25

James, Andrew J.

Electrical pulse counters, pulse dividers, or shift registers: c

Counting or dividing in incremental steps

Beam type tube

357 22, 357 24, 377 60, H01L 2714, H01L 2980, H01L 2978

Patent

active

051423464

ABSTRACT:
A floating gate junction filed-effect transistor image sensor element (10) is formed in a semiconductor layer (14). a drain region (20) of a first conductivity type of the elements (14) is formed adjacent a gate region (26). A potential barrier (98) is formed in the gate region (26) fo rcollecting carriers (102) of the second conductivity type, the barrier (98) also acting as a probing current well. A capacitor (28, 32, 48) is coupled to the gate region (26) and is operable to deliver a pulse to gate region (26) for sweeping out the carriers (102) to the substrate (12). The difference in gate bias voltage caused by the absence of the collected carriers (102) is sensed at a sense node (116) coupled to a source region (30).

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SIT Image Sensor: Design Considerations and Characteristics-Atsushi Yusa et al-IEEE Transactions on Electron Devices-vol. ED-33, No. 6, Jun. 1986.

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