Floating gate array transistors

Details Floating gate array transistors Floating gate array transistors

1990-08-17

1992-05-05

Prenty, Mark

357 15, H01L 2980, H01L 2948

Patent

active

051112540

ABSTRACT:
A junction field effect transistor having an array of electrically floating gate elements located between the control gate and the drain in the path of current flow from the source to the drain. As the drain voltage increases the depletion zone of the control gate expands until it reaches the nearest floating gate. The maximum electric field at the control gate is clamped while the nearest floating gate increases in potential and its depletion zone expands toward the next floating gate, and so on. In this way the applied voltage is spread over the array of floating gates clamping the maximum electric field at a value that is less than the avalanche breakdown field. Then, the avalanche breakdown voltage of the device is increased.

REFERENCES:
patent: 3267405 (1966-08-01), Weiss et al.
patent: 4249190 (1981-02-01), Cho
patent: 4482907 (1984-11-01), Jay
patent: 4829173 (1989-05-01), Ditchek et al.
B. M. Ditchek et al., "Semiconductor-Metal Eutectic Composites for High-Power Switching", SPIE vol. 871 Space Struc., Power, and Power Conditioning (1988) pp. 148-152.
B. M. Ditchek et al., "Microcharacterization and Novel Device Applications of Semiconductor-Metal Eutectic Composites" vol. 27, No. 11, Nov. 1988, pp. L2155-2157, Japanese Jour. of Appl. Phys.
B. M. Ditchek et al., "Novel High Voltage Transistor Using the In Situ Junctions in a SiTaSi.sub.2 Eutectic Composite", Appl. Phys. Lett 52 (14) Apr. 1988, Amer. Inst. of Physics, pp. 1147-1149.
Y. C. Kao et al., "High-Voltage Planar p-n Junctions", Proc. of the IEEE, vol. 55, No. 8, Aug. 1967, pp. 1409-1414.

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